CHA5012 ref. : dsCHA50120179 - 28 jun 10 1/10 specification s subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 x band driver amplifier gaas monolithic microwave ic description the CHA5012 chip is a monolithic two- stage medium power amplifier designed for x band applications. this device is manufactured using a gainp hbt process, including via holes through the substrate and air bridges. a nitride layer protects the transistors and the passive components. special heat removal techniques are implemented to guarantee high reliability. to simplify the assembly process: the backside of the chip is both rf and dc grounded bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process. main features frequency band : 9.2-10.8 ghz pout @3db gain compression : 29.5 dbm p.a.e @3db gain compression : 40 % two biasing modes: digital control thanks to ttl interface analog control thanks to biasing circuit chip size: 2.87 x 1.47 x 0.1 mm 3 pout & pae @ 3db gain compression and linear gain (temperature 25c) main characteristics tamb = +25c, vc = +7.5v (pulse 100s 20%) symbol parameter min typ max unit fop operating frequency range 9.2 10.8 ghz g small signal gain 21 23 db p3db output power at 3db compression 29.5 dbm icq power supply quiescent current 200 ma esd protections : electrostatic discharge sensitive device observe handling precautions
CHA5012 x band driver amplifier ref. dsCHA50120179 - 28 jun 10 2/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics vc= +7.5v (pulse 100s 20%) symbol parameter min typ max unit fop operating frequency range 9.2 10.8 ghz g small signal gain at 25c 21 22.5 db d g small signal gain flatness at 25c 0.5 db d g_t linear gain variation vs temperature -0.025 db/c pin input power (1) 17 dbm p1db output power at 1db gain compression at 25c 28 dbm p3db output power at 3db gain compression at 25c output power at 3db gain compression at 80c 27.5 27 29.5 29 dbm pae_3dbc pae at 3db gain compression at 25c pae at 3db gain compression at 80c 40 37 % dbs11 input return loss -12 -10 db dbs22 output return loss -10 -7 db vc power supply voltage 7.5 v icq power supply quiescent current (2) 200 ma ic_ 3dbc consumption under 3db compression 290 ma vctrl collector current control voltage 5 v ictrl biasing circuit consumption 5 ma i_ti ttl input consumption 1 ma ti_low ttl input voltage low level 0 0.4 v ti_high ttl input voltage high level (2) 2.5 5 ma (1) output load 50 (2) for vc=7.5v, ttl interface settles icq to 200 ma when ti=ti_high . if needed, icq can be tuned thanks to vctrl if the analog biasing circuit is use d absolute maximum ratings (3) tamb = 25c symbol parameter values unit top operating temperature range -40 to +80 c vc power supply voltage (4) 10 v icq power supply quiescent current 320 ma ic_sat power supply current in saturation 350 ma vct collector current control voltage 6.5 v tj maximum junction temperature 175 c tstg storage temperature range -55 to +125 c (3) operation of this device above anyone of these parameters may cause permanent damage. (4) without rf input power
x band driver amplifier CHA5012 ref. : dsCHA50120179 - 28 jun 10 3/10 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical measurement characteristics measurement conditions : vc=7.5v ttl interface used for biasing. ti_high=5v and ti_l ow=0v (ic quiescient=200ma ) pulse width=100s, duty cycle= 20% linear gain versus frequency and temperature output power @3db gain compression versus frequency and temperature
CHA5012 x band driver amplifier ref. dsCHA50120179 - 28 jun 10 4/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 power added efficiency @3db gain compression versus frequency and temperature collector current @3db gain compression versus freq uency and temperature
x band driver amplifier CHA5012 ref. : dsCHA50120179 - 28 jun 10 5/10 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 output power versus gain compression and frequency (temp.=25c) 10 12 14 16 18 20 22 24 26 28 30 32 -1 0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 pin (dbm) pout (dbm) 9.2ghz 10ghz 10.8ghz output power versus pin and frequency (temp.=25c)
CHA5012 x band driver amplifier ref. dsCHA50120179 - 28 jun 10 6/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 100 150 200 250 300 350 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 pin(dbm) ic (ma) 25c 80c -40c collector current versus input power and temperatur e @10ghz 0 50 100 150 200 250 300 350 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 5,5 6 6,5 7 ti / vctrl (v) icq (ma) -40c -40c 25c 80c 25c 80c collector quiescent current versus ti, vctrl and te mperature
x band driver amplifier CHA5012 ref. : dsCHA50120179 - 28 jun 10 7/10 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 0 1 2 3 4 5 6 7 8 9 10 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 5,5 6 6,5 7 vctrl (v) ictrl (ma) -40c 25c 80c control current versus vctrl and temperature
CHA5012 x band driver amplifier ref. dsCHA50120179 - 28 jun 10 8/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip mechanical data and pin references chip thickness = 100 +/- 10 m rf pads (1, 12) = 118 x 68 m2 dc pads (2, 3, 4, 5, 9,6, 7, 8, 9, 10, 11) = 96 x 9 6 m2 pin number pin name description 1 in input rf port 7, 9 nc 5, 8 vctrl collector current control voltage 2 ti ttl input 4 to ttl output 10 gnd ground (nc) 3, 6, 11 vc power supply voltage 12 out output rf port
x band driver amplifier CHA5012 ref. : dsCHA50120179 - 28 jun 10 9/10 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 bonding recommendations port connection in (1) inductance (lbonding) = 0.3nh 400m length with wire diameter of 25 m out (12) inductance (lbonding) = 0.3nh 400m length with wire diameter of 25 m assembly recommendations in test fixture using ttl interface note: when the ttl interface is used for biasing, t he pin to (pin number 4) must be connected to the pins vctrl ( pins number 5 and 8). assembly recommendations in test fixture using anal og biasing circuits
CHA5012 x band driver amplifier ref. dsCHA50120179 - 28 jun 10 10/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 recommended esd management refer to the application note an0020 available at http://www.ums-gaas.com for esd sensitivity and handling recommendations for the um s products. ordering information chip form : CHA5012-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
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